DocumentCode
2031143
Title
The impact of an external body-bias on the hot-carrier degradation of partially depleted SOI N-MOSFETs at cryogenic temperatures
Author
Dieudonné, F. ; Jomaah, J. ; Raynaud, C. ; Balestra, F.
Author_Institution
Institut de Microelectronique
fYear
2002
fDate
2002
Firstpage
11
Lastpage
14
Keywords
Cryogenics; Degradation; Hot carrier effects; Hot carriers; Impact ionization; MOSFET circuits; Silicon; Stress; Temperature dependence; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Low Temperature Electronics, 2002. Proceedings of the 5th European Workshop on
ISSN
1155-4339
Print_ISBN
2-86883-606-2
Type
conf
DOI
10.1109/WOLTE.2002.1022441
Filename
1022441
Link To Document