Title :
The impact of an external body-bias on the hot-carrier degradation of partially depleted SOI N-MOSFETs at cryogenic temperatures
Author :
Dieudonné, F. ; Jomaah, J. ; Raynaud, C. ; Balestra, F.
Author_Institution :
Institut de Microelectronique
Keywords :
Cryogenics; Degradation; Hot carrier effects; Hot carriers; Impact ionization; MOSFET circuits; Silicon; Stress; Temperature dependence; Temperature distribution;
Conference_Titel :
Low Temperature Electronics, 2002. Proceedings of the 5th European Workshop on
Print_ISBN :
2-86883-606-2
DOI :
10.1109/WOLTE.2002.1022441
