Title :
Degradation of hard MOS devices at low temperature
Author_Institution :
DAPNIA/SEDI
Keywords :
Annealing; CMOS technology; Degradation; Interface states; Ionizing radiation; MOS devices; MOSFETs; Stress; Temperature; Threshold voltage;
Conference_Titel :
Low Temperature Electronics, 2002. Proceedings of the 5th European Workshop on
Print_ISBN :
2-86883-606-2
DOI :
10.1109/WOLTE.2002.1022442
