The I-V characteristics of SiO2 after ultra high temperature diffusion

The silicon wafer is stable at room temperature but weak at high temperature, which is necessary for it to be fabricated into a power semiconductor device. During thermal diffusion processing, the high temperature produces a variety of thermal stresses in the wafer, resulting in device failure modes that can cause unwanted oxide charge or defects. This disrupts the silicon crystal structure and permanently degrades the electrical and physical characteristics of the wafer. In this paper, the electrical characteristics of a single oxide layer after the high temperature diffusion process, the wafer growing method, and the thickness of poly-back were researched. The oxide quality was examined, based on I-V characteristics, defect density and BMD (bulk micro defect) density.