Title :
New silicon devices beyond CMOS
Author :
Suzuki, E. ; Ishii, Kazuki ; Sekigawa, T.
Author_Institution :
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
Keywords :
CMOS technology; Circuits; Degradation; MOS devices; MOSFETs; Nanoelectronics; Nanotechnology; Silicon devices; Threshold voltage; Ultra large scale integration;
Conference_Titel :
Low Temperature Electronics, 2002. Proceedings of the 5th European Workshop on
Print_ISBN :
2-86883-606-2
DOI :
10.1109/WOLTE.2002.1022445
