Title :
Si nano-devices using an electron-hole system
Author :
Fujiwara, A. ; Takahashi, Y.
Author_Institution :
NTT Basic Research Laboratories, NTT Corporation
Keywords :
Charge carrier processes; Charge coupled devices; Electrons; Energy consumption; FETs; Laboratories; MOSFETs; Radiative recombination; Spontaneous emission; Wire;
Conference_Titel :
Low Temperature Electronics, 2002. Proceedings of the 5th European Workshop on
Print_ISBN :
2-86883-606-2
DOI :
10.1109/WOLTE.2002.1022456
