DocumentCode :
2031602
Title :
Investigations on the low-power and low-frequency noise performance of pHEMT at 4.2 K
Author :
Lucas, Lucas T. ; Jin, Jin Y.
Author_Institution :
LPN, MRS
fYear :
2002
fDate :
2002
Firstpage :
121
Lastpage :
124
Keywords :
Capacitance; Cryogenics; Gallium arsenide; HEMTs; Leakage current; Low-frequency noise; MODFETs; PHEMTs; Power supplies; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Low Temperature Electronics, 2002. Proceedings of the 5th European Workshop on
ISSN :
1155-4339
Print_ISBN :
2-86883-606-2
Type :
conf
DOI :
10.1109/WOLTE.2002.1022463
Filename :
1022463
Link To Document :
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