Title :
Effects of strain distribution on the optical gain of InGaN/AlInGaN
Author :
Ahn, D. ; Park, S.-H. ; Koo, B.H.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Seoul, Seoul, South Korea
Abstract :
Effects of the strain distribution on the optical gain of InGaN-AlInGaN QW light-emitting diodes (LEDs) is investigated. The amount of stress and strain in the multilayer quantum well structures are calculated taking into account the difference between crystalline parameters. Significant enhancement of optical gain is expected with the introduction of strain distribution layers.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; multilayers; semiconductor quantum wells; wide band gap semiconductors; InGaN-AlInGaN; crystalline parameters; light emitting diode; multilayer quantum well structure; optical gain; strain distribution; Capacitive sensors; Crystallization; Electron optics; Gallium nitride; Light emitting diodes; Luminescence; Nonhomogeneous media; Optical polarization; Piezoelectric polarization; Wave functions;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2009. NUSOD 2009. 9th International Conference on
Conference_Location :
Gwangju
Print_ISBN :
978-1-4244-4180-8
DOI :
10.1109/NUSOD.2009.5297194
