DocumentCode :
2031634
Title :
Graphene nanoribbon crossbar nanomesh
Author :
Habib, K.M.M. ; Khitun, A. ; Balandin, A.A. ; Lake, R.K.
Author_Institution :
Dept. of Electr. Eng., Univ. of California Riverside, Riverside, CA, USA
fYear :
2011
fDate :
8-9 June 2011
Firstpage :
86
Lastpage :
90
Abstract :
Graphene nanoribbon crossbars exhibit negative differential resistance. This nonlinear current-voltage response can be exploited in a nanomesh geometry for high-density logic or memory. A 2xN crossbar array can store 3N states. Proof-of-principle of a high functional density architecture exploiting the non-linear dynamics of graphene nanoribbon crossbars in a nanomesh geometry is demonstrated.
Keywords :
graphene; nanoelectronics; nanostructured materials; negative resistance; 3N states; C; crossbar array; graphene nanoribbon crossbar nanomesh; high density logic; high functional density architecture; nanomesh geometry; negative differential resistance; nonlinear current voltage response; nonlinear dynamics; Computer architecture; Geometry; Nanoscale devices; Numerical models; Photonic band gap; Quantum capacitance; FIREBALL; NDR; NEGF; crossbar; graphene; multi-valued memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoscale Architectures (NANOARCH), 2011 IEEE/ACM International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0993-7
Type :
conf
DOI :
10.1109/NANOARCH.2011.5941488
Filename :
5941488
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2031634
بازگشت