• DocumentCode
    2031634
  • Title

    Graphene nanoribbon crossbar nanomesh

  • Author

    Habib, K.M.M. ; Khitun, A. ; Balandin, A.A. ; Lake, R.K.

  • Author_Institution
    Dept. of Electr. Eng., Univ. of California Riverside, Riverside, CA, USA
  • fYear
    2011
  • fDate
    8-9 June 2011
  • Firstpage
    86
  • Lastpage
    90
  • Abstract
    Graphene nanoribbon crossbars exhibit negative differential resistance. This nonlinear current-voltage response can be exploited in a nanomesh geometry for high-density logic or memory. A 2xN crossbar array can store 3N states. Proof-of-principle of a high functional density architecture exploiting the non-linear dynamics of graphene nanoribbon crossbars in a nanomesh geometry is demonstrated.
  • Keywords
    graphene; nanoelectronics; nanostructured materials; negative resistance; 3N states; C; crossbar array; graphene nanoribbon crossbar nanomesh; high density logic; high functional density architecture; nanomesh geometry; negative differential resistance; nonlinear current voltage response; nonlinear dynamics; Computer architecture; Geometry; Nanoscale devices; Numerical models; Photonic band gap; Quantum capacitance; FIREBALL; NDR; NEGF; crossbar; graphene; multi-valued memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoscale Architectures (NANOARCH), 2011 IEEE/ACM International Symposium on
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    978-1-4577-0993-7
  • Type

    conf

  • DOI
    10.1109/NANOARCH.2011.5941488
  • Filename
    5941488
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2031634