Optical properties of type-II InGaN/GaAsN/GaN quantum wells light-emitting diodes

Spontaneous emission spectra of type-II InGaN/GaNAs QW light-emitting diodes are investigated using the multiband effective mass theory. These results are compared with those of conventional InGaN/GaN QW structures. In the case of a low carrier density, a type-II InGaN/InGaN/GaN QW structure shows much larger matrix element than a conventional InGaN/GaN QW structure. On the other hand, in the case of high carrier density, a type-II QW structure shows slightly smaller matrix element than a conventional QW structure. The type-II InGaN/InGaN/GaN QW structure shows much larger spontaneous emission peak than that of a conventional QW structure. This is mainly due to the fact that, in the case of the type-II QW structure, the effective well width is greatly reduced.