Title :
High efficient 635nm resonant-cavity light-emitting diodes with modified electron stopped layers
Author :
Lysak, V.V. ; Park, C.Y. ; Park, K.W. ; Lee, Yong Tak
Author_Institution :
Dept. of Inf. & Commun., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
Abstract :
In this work, the analysis of thermal, electrical and optical properties of 635 nm InGaAlP resonant-cavity light-emitting diodes is presented. We show that including the electron stop layer in both side of active layer improves the efficiency of such device due to increasing the electron capture efficiency in the quantum wells. Theoretical analysis is proved by experimental work.
Keywords :
III-V semiconductors; aluminium compounds; conduction bands; gadolinium compounds; indium compounds; light emitting diodes; photoluminescence; semiconductor quantum wells; InGaAlP; electrical properties; electron capture efficiency; modified electron stopped layers; optical properties; quantum wells; resonant-cavity light-emitting diodes; thermal properties; wavelength 635 nm; Conducting materials; Distributed Bragg reflectors; Electrons; High intensity discharge lamps; Lattices; Light emitting diodes; Resonance; Spontaneous emission; Stimulated emission; Wheels;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2009. NUSOD 2009. 9th International Conference on
Conference_Location :
Gwangju
Print_ISBN :
978-1-4244-4180-8
DOI :
10.1109/NUSOD.2009.5297199
