Si3N4 / SiO2 passivation layer on InP for optimization of the 1.55μm MQW FP laser performance

Author

Tan, C.L. ; Jang, S.J. ; Lee, Y.T.

Author_Institution

Dept. of Inf. & Commun., Gwangju Inst. of Sci. & Technol. (GIST), Gwangju, South Korea

fYear

2009

fDate

14-17 Sept. 2009

Firstpage

91

Lastpage

92

Abstract

The importance of the passivation in semiconductor surfaces as chemical passivation, electrical passivation and leakage current blockage is studied. Simulation of the multiple quantum well Fabry-Perot laser diode with passivation layer is done by making the assumption that the passivation interface has an ideal surface condition. The simulation model included the heat flow condition in the passivation interface. The simulation results are in good agreement with experiment. Threshold current as low as 21 mA is achieved with 1.8 um Si₃N₄ passivation layer. It is found that Si₃N₄ passivation layer improve the laser diode performance compare to SiO₂ passivation. Thicker passivation help in prevention of the leakage current.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; leakage currents; passivation; quantum well lasers; semiconductor quantum wells; silicon compounds; InGaAsP; InP; MQW FP laser; Si₃N₄; SiO₂; chemical passivation; current 21 mA; electrical passivation; heat flow condition; leakage current blockage; multiple quantum well Fabry-Perot laser diode; semiconductor surfaces; simulation model; wavelength 1.55 mum; Diode lasers; Leakage current; Optical device fabrication; Optical surface waves; Passivation; Quantum well devices; Quantum well lasers; Semiconductor lasers; Surface treatment; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices, 2009. NUSOD 2009. 9th International Conference on

Conference_Location

Gwangju

Print_ISBN

978-1-4244-4180-8

Type

conf

DOI

10.1109/NUSOD.2009.5297208

Filename

5297208