Title :
Si3N4 / SiO2 passivation layer on InP for optimization of the 1.55μm MQW FP laser performance
Author :
Tan, C.L. ; Jang, S.J. ; Lee, Y.T.
Author_Institution :
Dept. of Inf. & Commun., Gwangju Inst. of Sci. & Technol. (GIST), Gwangju, South Korea
Abstract :
The importance of the passivation in semiconductor surfaces as chemical passivation, electrical passivation and leakage current blockage is studied. Simulation of the multiple quantum well Fabry-Perot laser diode with passivation layer is done by making the assumption that the passivation interface has an ideal surface condition. The simulation model included the heat flow condition in the passivation interface. The simulation results are in good agreement with experiment. Threshold current as low as 21 mA is achieved with 1.8 um Si3N4 passivation layer. It is found that Si3N4 passivation layer improve the laser diode performance compare to SiO2 passivation. Thicker passivation help in prevention of the leakage current.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; leakage currents; passivation; quantum well lasers; semiconductor quantum wells; silicon compounds; InGaAsP; InP; MQW FP laser; Si3N4; SiO2; chemical passivation; current 21 mA; electrical passivation; heat flow condition; leakage current blockage; multiple quantum well Fabry-Perot laser diode; semiconductor surfaces; simulation model; wavelength 1.55 mum; Diode lasers; Leakage current; Optical device fabrication; Optical surface waves; Passivation; Quantum well devices; Quantum well lasers; Semiconductor lasers; Surface treatment; Waveguide lasers;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2009. NUSOD 2009. 9th International Conference on
Conference_Location :
Gwangju
Print_ISBN :
978-1-4244-4180-8
DOI :
10.1109/NUSOD.2009.5297208
