New methodology for ultra-fast detection and reduction of non-visual defects at the 90nm node and below using comprehensive e-test structure infrastructure and in-line DualBeamTM FIB

Author

Schmidt, Michael B. ; Kang, Hyong H. ; Dworkin, Larry ; Harris, Kenneth R. ; Lee, Sherry F.

Author_Institution

FEl Co., Hillsboro, OR

fYear

2006

fDate

22-24 May 2006

Firstpage

12

Lastpage

16

Abstract

This paper describes a methodology to quickly capture, characterize, prioritize, localize, and perform in-line FA on killer defects. The system, which includes comprehensive short-flow test wafers, fast inline e-test, a powerful data analysis system, and advanced in-line dual beam inspection, was demonstrated in a leading-edge 300mm fab at the 90nm technology node to detect and resolve both systematic and random defect mechanisms greater than 10times faster than traditional methods. This article describes several examples of detecting and resolving non-visual (subsurface) as well as visual defects for both back-end and front-end issues

Keywords

data analysis; focused ion beam technology; inspection; production testing; 300 mm; 90 nm; data analysis; e-test structure infrastructure; failure analysis; inline DualBeam FIB; killer defects; non-visual defect reduction; random defect mechanisms; short flow test wafers; systematic defect mechanisms; ultra fast detection; Acceleration; Data analysis; Failure analysis; Inspection; Manufacturing processes; Metrology; Random access memory; Semiconductor device testing; System testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference, 2006. ASMC 2006. The 17th Annual SEMI/IEEE

Conference_Location

Boston, MA

ISSN

1078-8743

Print_ISBN

1-4244-0254-9

Type

conf

DOI

10.1109/ASMC.2006.1638716

Filename

1638716