On optimum designs of a RCE Si/SiGe/Si MQW photodetector for long wavelength applications

Author

Das, Mukul K. ; Das, N.R.

Author_Institution

Dept. of Electron. & Instrum., ISM Univ., Dhanbad, India

fYear

2009

fDate

14-17 Sept. 2009

Firstpage

87

Lastpage

88

Abstract

In the present paper, performance analysis of a resonant-cavity-enhanced Si/Si_1-yGe_y/Si multiple quantum well photodetector has been carried out. The effects of material parameters of active Si_1-yGe_y layers and carrier trapping by the potential barriers at the heterointerfaces of Si/Si_1-yGe_y/Si quantum wells on the bandwidth (BW) and responsivity of the detector have been investigated using numerical simulation. Results on possible optimum designs of the photodetector have been suggested to maximize responsivity-BW product.

Keywords

Ge-Si alloys; cavity resonators; elemental semiconductors; photodetectors; semiconductor materials; semiconductor quantum wells; silicon; RCE MQW photodetector; Si-Si_1-yGe_y; carrier trapping; detector bandwidth; detector responsivity; long wavelength applications; material parameters; multiple quantum well photodetector; numerical simulation; potential barriers; resonant-cavity-enhanced photodetector; Absorption; Bandwidth; Current density; Equations; Germanium silicon alloys; Optical fiber communication; Photodetectors; Quantum well devices; Resonance; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices, 2009. NUSOD 2009. 9th International Conference on

Conference_Location

Gwangju

Print_ISBN

978-1-4244-4180-8

Type

conf

DOI

10.1109/NUSOD.2009.5297210

Filename

5297210