Title :
On optimum designs of a RCE Si/SiGe/Si MQW photodetector for long wavelength applications
Author :
Das, Mukul K. ; Das, N.R.
Author_Institution :
Dept. of Electron. & Instrum., ISM Univ., Dhanbad, India
Abstract :
In the present paper, performance analysis of a resonant-cavity-enhanced Si/Si1-yGey/Si multiple quantum well photodetector has been carried out. The effects of material parameters of active Si1-yGey layers and carrier trapping by the potential barriers at the heterointerfaces of Si/Si1-yGey/Si quantum wells on the bandwidth (BW) and responsivity of the detector have been investigated using numerical simulation. Results on possible optimum designs of the photodetector have been suggested to maximize responsivity-BW product.
Keywords :
Ge-Si alloys; cavity resonators; elemental semiconductors; photodetectors; semiconductor materials; semiconductor quantum wells; silicon; RCE MQW photodetector; Si-Si1-yGey; carrier trapping; detector bandwidth; detector responsivity; long wavelength applications; material parameters; multiple quantum well photodetector; numerical simulation; potential barriers; resonant-cavity-enhanced photodetector; Absorption; Bandwidth; Current density; Equations; Germanium silicon alloys; Optical fiber communication; Photodetectors; Quantum well devices; Resonance; Silicon germanium;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2009. NUSOD 2009. 9th International Conference on
Conference_Location :
Gwangju
Print_ISBN :
978-1-4244-4180-8
DOI :
10.1109/NUSOD.2009.5297210
