Title :
Numerical analysis of two-color HgCdTe infrared photovoltaic heterostructure detector
Author :
Hu, W.D. ; Chen, X.S. ; Yin, F. ; Ye, Z.H. ; Lin, C. ; Hu, X.N. ; Li, Z.F. ; Lu, W.
Author_Institution :
Nat. Lab. for Infrared Phys., Chinese Acad. of Sci., Shanghai, China
Abstract :
We report on 2D numerical simulations of spectral photoresponse characteristic for two-color HgCdTe infrared photovoltaic detector. Effects of thickness of absorption layer and doping profiles on the photoresponse, quantum efficiency and crosstalk have been investigated. Optimal thickness of absorption layers and doping profiles are numerically calculated.
Keywords :
II-VI semiconductors; cadmium compounds; crosstalk; doping profiles; infrared detectors; mercury compounds; photodetectors; wide band gap semiconductors; 2D numerical simulations; absorption layer; crosstalk; doping profiles; quantum efficiency; spectral photoresponse; two-color infrared photovoltaic heterostructure detector; Charge carrier lifetime; Crosstalk; Doping profiles; Electromagnetic wave absorption; Infrared detectors; Infrared spectra; Numerical analysis; Numerical simulation; Photovoltaic systems; Solar power generation;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2009. NUSOD 2009. 9th International Conference on
Conference_Location :
Gwangju
Print_ISBN :
978-1-4244-4180-8
DOI :
10.1109/NUSOD.2009.5297213
