Numerical analysis of two-color HgCdTe infrared photovoltaic heterostructure detector

Author

Hu, W.D. ; Chen, X.S. ; Yin, F. ; Ye, Z.H. ; Lin, C. ; Hu, X.N. ; Li, Z.F. ; Lu, W.

Author_Institution

Nat. Lab. for Infrared Phys., Chinese Acad. of Sci., Shanghai, China

fYear

2009

fDate

14-17 Sept. 2009

Firstpage

85

Lastpage

86

Abstract

We report on 2D numerical simulations of spectral photoresponse characteristic for two-color HgCdTe infrared photovoltaic detector. Effects of thickness of absorption layer and doping profiles on the photoresponse, quantum efficiency and crosstalk have been investigated. Optimal thickness of absorption layers and doping profiles are numerically calculated.

Keywords

II-VI semiconductors; cadmium compounds; crosstalk; doping profiles; infrared detectors; mercury compounds; photodetectors; wide band gap semiconductors; 2D numerical simulations; absorption layer; crosstalk; doping profiles; quantum efficiency; spectral photoresponse; two-color infrared photovoltaic heterostructure detector; Charge carrier lifetime; Crosstalk; Doping profiles; Electromagnetic wave absorption; Infrared detectors; Infrared spectra; Numerical analysis; Numerical simulation; Photovoltaic systems; Solar power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices, 2009. NUSOD 2009. 9th International Conference on

Conference_Location

Gwangju

Print_ISBN

978-1-4244-4180-8

Type

conf

DOI

10.1109/NUSOD.2009.5297213

Filename

5297213