Ge/Si photodetectors and group IV alloy based photodetector materials

Author

Basu, P.K. ; Das, N.R. ; Mukhopadhyay, Bratati ; Sen, Gopa ; Das, Mukul K.

Author_Institution

Inst. of Radio Phys. & Electron., Univ. of Calcutta, Kolkata, India

fYear

2009

fDate

14-17 Sept. 2009

Firstpage

79

Lastpage

80

Abstract

Photodetecctors using Si, Ge and other group IV alloys are of current interest for use at telecommunication wavelength 1550 nm. We have presented in this paper our work on resonant cavity enhanced (RCE) Si/SiGe multiple Quantum Well (MQW) and Ge Schottky photodetectors. Tensile strained Ge layers grown with suitable barriers show direct gap type I band alignment. Predicted performance of photodetectors using strong Quantum Confined Stark Effect and Franz-Keldysh effects in these structures and properties related to photodetection using these new materials are also described.

Keywords

Ge-Si alloys; Schottky diodes; elemental semiconductors; energy gap; germanium; photodetectors; photodiodes; quantum confined Stark effect; quantum well devices; semiconductor quantum wells; silicon; Franz-Keldysh effect; Ge; RCE MQW photodetector; Schottky photodetectors; Schottky photodiode; Si-SiGe; direct gap type I band alignment; group IV alloy; quantum confined Stark effect; resonant cavity enhanced multiple quantum well photodetectors; wavelength 1550 nm; Absorption; Germanium alloys; Germanium silicon alloys; III-V semiconductor materials; Photodetectors; Potential well; Quantum well devices; Resonance; Silicon alloys; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices, 2009. NUSOD 2009. 9th International Conference on

Conference_Location

Gwangju

Print_ISBN

978-1-4244-4180-8

Type

conf

DOI

10.1109/NUSOD.2009.5297214

Filename

5297214