Title :
Ge/Si photodetectors and group IV alloy based photodetector materials
Author :
Basu, P.K. ; Das, N.R. ; Mukhopadhyay, Bratati ; Sen, Gopa ; Das, Mukul K.
Author_Institution :
Inst. of Radio Phys. & Electron., Univ. of Calcutta, Kolkata, India
Abstract :
Photodetecctors using Si, Ge and other group IV alloys are of current interest for use at telecommunication wavelength 1550 nm. We have presented in this paper our work on resonant cavity enhanced (RCE) Si/SiGe multiple Quantum Well (MQW) and Ge Schottky photodetectors. Tensile strained Ge layers grown with suitable barriers show direct gap type I band alignment. Predicted performance of photodetectors using strong Quantum Confined Stark Effect and Franz-Keldysh effects in these structures and properties related to photodetection using these new materials are also described.
Keywords :
Ge-Si alloys; Schottky diodes; elemental semiconductors; energy gap; germanium; photodetectors; photodiodes; quantum confined Stark effect; quantum well devices; semiconductor quantum wells; silicon; Franz-Keldysh effect; Ge; RCE MQW photodetector; Schottky photodetectors; Schottky photodiode; Si-SiGe; direct gap type I band alignment; group IV alloy; quantum confined Stark effect; resonant cavity enhanced multiple quantum well photodetectors; wavelength 1550 nm; Absorption; Germanium alloys; Germanium silicon alloys; III-V semiconductor materials; Photodetectors; Potential well; Quantum well devices; Resonance; Silicon alloys; Silicon germanium;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2009. NUSOD 2009. 9th International Conference on
Conference_Location :
Gwangju
Print_ISBN :
978-1-4244-4180-8
DOI :
10.1109/NUSOD.2009.5297214
