Modeling of Transistor Laser Optical Amplifiers under steady state and transient conditions

Author

Basu, Rikmantra ; Barman, Abhirup Das ; Basu, P.K.

Author_Institution

Inst. of Radio Phys. & Electron., Univ. of Calcutta, Kolkata, India

fYear

2009

fDate

14-17 Sept. 2009

Firstpage

61

Lastpage

62

Abstract

We have explored the possibility of using transistor laser as an optical amplifier in addition to its normal function as an electronic amplifier. The steady state gain is calculated by assuming different InGaAs Quantum Well thickness within the GaAs base of fixed width thereby changing the capture rate and confinement factor. Clear gain saturation effect is exhibited. Using ODE solver, the gain saturation as a function of time is demonstrated. The linewidth enhancement factor of the amplifier is also evaluated.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; semiconductor optical amplifiers; semiconductor quantum wells; transistors; InGaAs-GaAs; ODE solver; capture rate; confinement factor; electronic amplifier; gain saturation effect; linewidth enhancement factor; quantum well thickness; steady state gain; transient condition; transistor laser optical amplifiers; Equations; Laser modes; Optical amplifiers; Optical devices; Optical mixing; Optical resonators; Optical saturation; Semiconductor optical amplifiers; Steady-state; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices, 2009. NUSOD 2009. 9th International Conference on

Conference_Location

Gwangju

Print_ISBN

978-1-4244-4180-8

Type

conf

DOI

10.1109/NUSOD.2009.5297224

Filename

5297224