DocumentCode :
2032531
Title :
Evaporation vs. Sputtering of metal layers on the Backside of Silicon wafers
Author :
Ciacchi, Martina ; Eder, Hannes ; Hirscher, Hans
Author_Institution :
DEEI, Trieste Univ.
fYear :
2006
fDate :
22-24 May 2006
Firstpage :
99
Lastpage :
103
Abstract :
We present the results of the differences observed between evaporated and sputtered backside metallization processes on silicon wafers: these two methods of fabricating metal layers and the activation of the backside semiconductor-metal contact follow different physical mechanisms. Differing crystalline structures of the metal layers can be observed and the thermal budget of the overall process of the wafer is affected in different ways. In this paper, we describe these differences, provide a description of the known physical and mechanical mechanisms and propose some models. Additionally, we report a few production issues and experiences
Keywords :
crystal structure; metallisation; semiconductor-metal boundaries; sputter deposition; vacuum deposition; backside metallization; crystalline structures; evaporation process; metal layer fabrication; metal layers sputtering; semiconductor-metal contact; silicon wafers; Electron beams; Inorganic materials; Metallization; Plasma applications; Plasma materials processing; Production; Semiconductor materials; Silicon; Sputtering; Throughput;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference, 2006. ASMC 2006. The 17th Annual SEMI/IEEE
Conference_Location :
Boston, MA
ISSN :
1078-8743
Print_ISBN :
1-4244-0254-9
Type :
conf
DOI :
10.1109/ASMC.2006.1638731
Filename :
1638731
Link To Document :
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