Title :
Design of evanescent semiconductor waveguide optical isolators
Author :
Shimizu, H. ; Mori, T. ; Goto, S.
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Univ. of Agric. & Technol., Koganei, Japan
Abstract :
We have designed evanescent waveguide semiconductor optical isolators to realize 8.7 dB/mm-isolation and lower forward transparent current. They are composed of an upper InGaAsP waveguide layer with Fe layer at their sidewall upon the active layer.
Keywords :
gallium arsenide; gallium compounds; indium compounds; integrated optics; iron; optical design techniques; optical isolators; optical waveguide components; semiconductor quantum wells; Fe; InGaAsP; active layer; evanescent semiconductor waveguide optical isolators; forward transparent current; waveguide layer; Isolators; Nonlinear optics; Optical buffering; Optical design; Optical films; Optical refraction; Optical surface waves; Optical variables control; Optical waveguides; Semiconductor waveguides;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2009. NUSOD 2009. 9th International Conference on
Conference_Location :
Gwangju
Print_ISBN :
978-1-4244-4180-8
DOI :
10.1109/NUSOD.2009.5297235
