DocumentCode :
2032785
Title :
Thermo-mechanical simulations of an open tungsten TSV
Author :
Singulani, A.P. ; Ceric, H. ; Selberherr, Siegfried
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
fYear :
2012
fDate :
5-7 Dec. 2012
Firstpage :
107
Lastpage :
111
Abstract :
A specific open Through Silicon Via (TSV) technology is analyzed by means of thermo-mechanical Finite Element Method (FEM) simulations in order to assess stress behavior and to identify critical stress points in the structure. An analytical expression is introduced for the stress field around one TSV and its application in the description of the stress in a particular arrangement of vias is discussed. The analysis provides a consistent justification for the robustness of the technology, while it also points out the potential failure points.
Keywords :
circuit simulation; finite element analysis; stress analysis; thermomechanical treatment; three-dimensional integrated circuits; tungsten; FEM; W; critical stress point identification; finite element method; open tungsten TSV technology; stress behavior analysis; thermomechanical simulation; through silicon via technology; Finite element analysis; Metals; Reliability; Silicon; Solid modeling; Stress; Through-silicon vias;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Packaging Technology Conference (EPTC), 2012 IEEE 14th
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-4553-8
Electronic_ISBN :
978-1-4673-4551-4
Type :
conf
DOI :
10.1109/EPTC.2012.6507061
Filename :
6507061
Link To Document :
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