• DocumentCode
    2032863
  • Title

    Finite element simulations of stresses in CUP Bond pads of Al-Si02 interconnect

  • Author

    Hunter, S.G. ; Gohnert, R. ; Dutson, A.J. ; Naidu, D. Subbaram

  • fYear
    2012
  • fDate
    5-7 Dec. 2012
  • Firstpage
    125
  • Lastpage
    130
  • Abstract
    [EPTC2012 p319.doc] Bond pads in IC technologies having aluminum-based metallization (Al) and silicon dioxide dielectric (SiO2) are studied in relation to stresses from unit probe and wirebond, with emphasis on bond pads with thin pad Al. Finite element simulations attempt to replicate bond pad experimental data previously disclosed by ON Semiconductor. The simulations predict bond pad internal stress locations and magnitudes, providing more understanding of why one bond pad cracks and another doesn´t. Implications for bond pad design and copper (Cu) wirebond on circuit under pad (CUP) are discussed.
  • Keywords
    aluminium; finite element analysis; integrated circuit bonding; integrated circuit interconnections; lead bonding; silicon compounds; Al-SiO2; CUP bond pads; IC technologies; ON semiconductor; bond pad internal stress locations; bond pad stress magnitudes; circuit under pad; finite element simulations; unit probe; wirebond; Decision support systems; Films; Gold; Probes; Tensile stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics Packaging Technology Conference (EPTC), 2012 IEEE 14th
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4673-4553-8
  • Electronic_ISBN
    978-1-4673-4551-4
  • Type

    conf

  • DOI
    10.1109/EPTC.2012.6507064
  • Filename
    6507064
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2032863