DocumentCode
2032921
Title
Peculiarities of HEMT current-voltage characteristic with thin InAs layer
Author
Martynov, Ya.B. ; Pashkovskiy, A.B. ; Pogorelova, E.V.
Author_Institution
R&D Istok, Fed. State Unitary Corp., Fryazino, Russia
fYear
2013
fDate
8-14 Sept. 2013
Firstpage
118
Lastpage
119
Abstract
The possibility of HEMT drain current enhancement is numerically investigated by means of implementation of a super thin film semiconductor layer with high mobility. The peculiarities of new and standard HEMT current-voltage characteristics were also investigated.
Keywords
III-V semiconductors; electron mobility; high electron mobility transistors; indium compounds; semiconductor thin films; HEMT current-voltage characteristics; HEMT drain current enhancement; InAs; high mobility; super thin film semiconductor layer; Current-voltage characteristics; Electronic mail; Facsimile; Gallium arsenide; HEMTs; Logic gates; Standards;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-966-335-395-1
Type
conf
Filename
6652718
Link To Document