Title :
Peculiarities of HEMT current-voltage characteristic with thin InAs layer
Author :
Martynov, Ya.B. ; Pashkovskiy, A.B. ; Pogorelova, E.V.
Author_Institution :
R&D Istok, Fed. State Unitary Corp., Fryazino, Russia
Abstract :
The possibility of HEMT drain current enhancement is numerically investigated by means of implementation of a super thin film semiconductor layer with high mobility. The peculiarities of new and standard HEMT current-voltage characteristics were also investigated.
Keywords :
III-V semiconductors; electron mobility; high electron mobility transistors; indium compounds; semiconductor thin films; HEMT current-voltage characteristics; HEMT drain current enhancement; InAs; high mobility; super thin film semiconductor layer; Current-voltage characteristics; Electronic mail; Facsimile; Gallium arsenide; HEMTs; Logic gates; Standards;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-395-1
