DocumentCode :
2032924
Title :
Simulation of laser beam induced current for HgCdTe photodiodes with leakage current
Author :
Yin, F. ; Hu, W.D. ; Zhang, B. ; Li, Z.F. ; Hu, X.N. ; Chen, X.S. ; Lu, W.
Author_Institution :
Nat. Lab. for Infrared Phys., Chinese Acad. of Sci., Shanghai, China
fYear :
2009
fDate :
14-17 Sept. 2009
Firstpage :
35
Lastpage :
36
Abstract :
We report on 2D numerical simulations of laser beam induced current (LBIC) for HgCdTe photovoltaic detector. The effect of junction leakage current on the LBIC signal is investigated, and different leakage paths caused by different reasons in HgCdTe photodiode arrays are taken into account in the simulation. The simulation results are in good agreement with the experiment data. Simulation results suggest that the LBIC can be used to determine the existence of the junction leakage current and investigate the original of the junction leakage current.
Keywords :
II-VI semiconductors; cadmium compounds; laser beam effects; leakage currents; mercury compounds; photodetectors; photodiodes; sensor arrays; wide band gap semiconductors; 2D numerical simulations; HgCdTe; LBIC signal; junction leakage current; laser beam induced current; leakage paths; photodiode arrays; photovoltaic detector; Infrared detectors; Laser beams; Leakage current; P-n junctions; Photodiodes; Photovoltaic systems; Poisson equations; Semiconductor laser arrays; Sensor arrays; Solar power generation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2009. NUSOD 2009. 9th International Conference on
Conference_Location :
Gwangju
Print_ISBN :
978-1-4244-4180-8
Type :
conf
DOI :
10.1109/NUSOD.2009.5297241
Filename :
5297241
Link To Document :
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