The effect of temperature on the recombination rate of AlGaN/GaN light emitting diodes

Author

Shishehi, Sara ; Asgari, Asghar ; Kheradmand, Reza

Author_Institution

Res. Inst. for Appl. Phys., Univ. of Tabriz, Tabriz, Iran

fYear

2009

fDate

14-17 Sept. 2009

Firstpage

31

Lastpage

32

Abstract

Nitride semiconductors and their alloys recently have versatile applications as high-power and high-efficiency electro optical devices duo to their high thermal stability, direct transition and wide bang-gap. Nanostructure light emitting diodes of these materials have an emission spectrum from infrared to ultraviolet. In this paper, besides simulating a nanostructure nitride semiconductor LED, such as multi quantum well nitride LEDs, the effect of temperature on the recombination rate has been investigated.

Keywords

III-V semiconductors; Poisson equation; Schrodinger equation; aluminium compounds; dielectric polarisation; electron-hole recombination; gallium compounds; light emitting diodes; nanoelectronics; piezoelectricity; quantum well devices; wide band gap semiconductors; AlGaN-GaN; Poisson equation; Schrodinger equation; continuity equations; light emitting diodes; multi quantum well nitride LED; nanostructure nitride semiconductor LED; piezoelectric polarization; recombination rate; spontaneous polarization; Aluminum gallium nitride; Electrooptic devices; Gallium nitride; Light emitting diodes; Nanostructured materials; Optical materials; Radiative recombination; Semiconductor materials; Temperature; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices, 2009. NUSOD 2009. 9th International Conference on

Conference_Location

Gwangju

Print_ISBN

978-1-4244-4180-8

Type

conf

DOI

10.1109/NUSOD.2009.5297243

Filename

5297243