Title :
Theoretical analysis of polarization characteristics of InGaN/GaN LEDs with photonic crystals
Author :
Jung, M.R. ; Yu, Jae Su ; Song, Y.M. ; Lee, Y.T.
Author_Institution :
Dept. of Electron. & Radio Eng., Kyung Hee Univ., Yongin, South Korea
Abstract :
We investigated theoretically the polarization characteristics of GaN-based green (525 nm) light-emitting diodes (LEDs) with photonic crystals (PCs) using a three-dimensional finite difference time domain method. The light extraction efficiency depends strongly on the photonic bandgap (PBG) position relative to a frequency (a/lambda) and the depth of air hole for transverse electric (TE) and transverse magnetic (TM) polarizations. The maximum extraction efficiency was achieved when the frequency of a/lambda was matched within PBG region, leading to about 29% (22%) higher than the conventional LED without photonic crystals for TE (TM) polarization. It is found that the polarization of light can be controlled by the a/lambda in PC structure.
Keywords :
III-V semiconductors; finite difference time-domain analysis; gallium compounds; indium compounds; light emitting diodes; photonic band gap; photonic crystals; wide band gap semiconductors; 3D finite difference time domain method; InGaN-GaN; LED; light extraction efficiency; light-emitting diodes; photonic bandgap position; photonic crystals; transverse electric polarization; transverse magnetic polarization; Finite difference methods; Frequency; Gallium nitride; Light emitting diodes; Optical polarization; Personal communication networks; Photonic band gap; Photonic crystals; Tellurium; Time domain analysis; Light-emitting diodes; finite difference time domain (FDTD); photonic bandgap; photonic crystals; polarizations;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2009. NUSOD 2009. 9th International Conference on
Conference_Location :
Gwangju
Print_ISBN :
978-1-4244-4180-8
DOI :
10.1109/NUSOD.2009.5297244
