DocumentCode :
2032979
Title :
Thermal characterization of TSV array as heat removal element in 3D IC stacking
Author :
Zhang, Leiqi ; Li, H.Y. ; Lo, G.Q. ; Tan, C.S.
Author_Institution :
Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
fYear :
2012
fDate :
5-7 Dec. 2012
Firstpage :
153
Lastpage :
156
Abstract :
Through-silicon-via (TSV) as a key enabler for three-dimensional (3D) integration provides electrical connections between stacked functional dies. This work examines the thermal characteristics of the TSV arrays and experimentally demonstrates that TSV arrays embedded in silicon substrate can be utilized as an effective heat removal element that helps in both heat dissipation and management of 3D integration. It is found that the use of appropriate TSV arrays which surround and are placed beneath a temperature sensor has an effective cooling capability as much as ~40°C.
Keywords :
cooling; integrated circuit interconnections; temperature sensors; three-dimensional integrated circuits; 3D IC stacking; Si; TSV array; electrical connection; heat dissipation; heat removal element; stacked functional die; temperature sensor; thermal characterization; three-dimensional integration management; through-silicon-via technology; Arrays; Fabrication; Heating; Resistance; Silicon; Temperature measurement; Through-silicon vias; TSV; thermal characteristics; thermal sensor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Packaging Technology Conference (EPTC), 2012 IEEE 14th
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-4553-8
Electronic_ISBN :
978-1-4673-4551-4
Type :
conf
DOI :
10.1109/EPTC.2012.6507069
Filename :
6507069
Link To Document :
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