Infusion processing for advanced transistor manufacturing

Author

Skinner, Wes ; Gwinn, Matt ; Hautala, John ; Kuroi, Takashi

Author_Institution

Epion Corp., Billerica, MA

fYear

2006

fDate

22-24 May 2006

Firstpage

172

Lastpage

176

Abstract

Production capable infusion processing equipment for ultra shallow doping and surface engineering is now available. Shrinking device dimensions require extremely shallow doping for many applications. New techniques are necessary in order to manufacture source drain extensions (SDE) and for DRAM poly doping. Channel engineering is required for advanced gates. High throughput, tight process control and low contamination are required from the process equipment. Epion Corporation has developed the nFusiontrade 300mm doping system that offers solutions for these applications. The production worthiness is characterized with high doping rates, long term repeatability, depth control and low contamination

Keywords

production equipment; semiconductor device manufacture; semiconductor doping; 300 mm; DRAM poly doping; advanced transistor manufacturing; channel engineering; depth control; infusion processing; process control; process equipment; source drain extensions; surface engineering; ultra shallow doping; Chemicals; Contamination; Doping profiles; Ion beams; Ion implantation; Manufacturing processes; Production; Semiconductor device doping; Throughput; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference, 2006. ASMC 2006. The 17th Annual SEMI/IEEE

Conference_Location

Boston, MA

ISSN

1078-8743

Print_ISBN

1-4244-0254-9

Type

conf

DOI

10.1109/ASMC.2006.1638746

Filename

1638746