Title :
Infusion processing for advanced transistor manufacturing
Author :
Skinner, Wes ; Gwinn, Matt ; Hautala, John ; Kuroi, Takashi
Author_Institution :
Epion Corp., Billerica, MA
Abstract :
Production capable infusion processing equipment for ultra shallow doping and surface engineering is now available. Shrinking device dimensions require extremely shallow doping for many applications. New techniques are necessary in order to manufacture source drain extensions (SDE) and for DRAM poly doping. Channel engineering is required for advanced gates. High throughput, tight process control and low contamination are required from the process equipment. Epion Corporation has developed the nFusiontrade 300mm doping system that offers solutions for these applications. The production worthiness is characterized with high doping rates, long term repeatability, depth control and low contamination
Keywords :
production equipment; semiconductor device manufacture; semiconductor doping; 300 mm; DRAM poly doping; advanced transistor manufacturing; channel engineering; depth control; infusion processing; process control; process equipment; source drain extensions; surface engineering; ultra shallow doping; Chemicals; Contamination; Doping profiles; Ion beams; Ion implantation; Manufacturing processes; Production; Semiconductor device doping; Throughput; Transistors;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference, 2006. ASMC 2006. The 17th Annual SEMI/IEEE
Conference_Location :
Boston, MA
Print_ISBN :
1-4244-0254-9
DOI :
10.1109/ASMC.2006.1638746
