Optical gains and interband transitions of CdTe/ZnTe single quantum wells

Author

You, J.H. ; Woo, J.T. ; Lee, D.U. ; Kim, T.W. ; Yoo, K.H. ; Park, H.L.

Author_Institution

Dept. of Electron. & Commun. Eng., Hanyang Univ., Seoul, South Korea

fYear

2009

fDate

14-17 Sept. 2009

Firstpage

19

Lastpage

20

Abstract

The optical gains of the CdTe/ZnTe single quantum wells with various CdTe widths were calculated by using a non-interacting pair Green´s function and by an energy space integrated function. The interband transition energies from the ground electronic subband to the ground heavy-hole subband calculated taking into account optical gains were in qualitatively reasonable agreement with those determined from the PL spectra.

Keywords

Green´s function methods; II-VI semiconductors; cadmium compounds; semiconductor quantum wells; wide band gap semiconductors; zinc compounds; CdTe-ZnTe; energy space integrated function; ground electronic subband; ground heavy-hole subband; interband transition energies; interband transitions; noninteracting pair Green´s function; optical gains; single quantum wells; Charge carrier processes; Electron optics; Green´s function methods; Integrated optics; Nonlinear optics; Optoelectronic devices; Physics; Research and development; Semiconductor nanostructures; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices, 2009. NUSOD 2009. 9th International Conference on

Conference_Location

Gwangju

Print_ISBN

978-1-4244-4180-8

Type

conf

DOI

10.1109/NUSOD.2009.5297249

Filename

5297249