Electron transport pecularities in GaN FET´s

Comparison of electron transport peculiarities of GaN and GaAs transistors has been carried out. It is shown that because of a splash of drift speed its value under a device lock made of GaAs almost doubles the value of drift speed in the transistor on basis of GaN, even at the identical value of mobility of electrons and in spite of much higher values of static speed of electrons in GaN in the strong fields.