DocumentCode :
2033189
Title :
Active-gate-control for snubberless IGBTs connected in series
Author :
Katoh, Shuji ; Ueda, Shigeta ; Sakai, Hiromitsu ; Ishida, Toshihiko ; Eguchi, Yoshio
Author_Institution :
Hitachi Ltd., Ibaraki, Japan
Volume :
2
fYear :
2002
fDate :
2002
Firstpage :
609
Abstract :
High-voltage IGBT power converters require IGBT series connection. To reduce the converter loss and simplify converter configuration, snubber circuits should be omitted. The authors have developed a technique for snubberless IGBT series connection by means of active-gate-control. Under the developed active-gate-control, the gate-voltage are set to increase with collector-voltage of each IGBT. The increased gate-voltage decreases IGBT impedance and limits the collector-voltage. The collector-voltages of the IGBTs connected in series can be balanced by clamping the collector-voltage of each single IGBT independently. Under the active-gate-control, the collector-voltages are directly converted to gate-voltage references, and the gate is charged before the collector-voltage reaches the clamping voltage. So the active-gate-control is so fast that the surge voltages at the recovery state can be clamped. Under the control the clamping voltage increases with increasing turn-off current and it is saturated at larger currents. By increasing the clamping voltage with increasing turn-off current, the increase of turn-off loss caused by collector-voltage clamping can be limited. Moreover saturating the clamping voltage at further higher currents prevents overvoltage failure.
Keywords :
bipolar transistor circuits; driver circuits; insulated gate bipolar transistors; power bipolar transistors; power convertors; power semiconductor switches; switching circuits; active-gate-control; clamping voltage; collector-voltage; converter configuration; converter loss; gate-voltage references; high-voltage IGBT converters; overvoltage failure prevention; snubberless IGBT series connection; turn-off current; turn-off loss; Circuits; Clamps; Delay; Diodes; Impedance; Insulated gate bipolar transistors; Lighting control; Snubbers; Surges; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics Specialists Conference, 2002. pesc 02. 2002 IEEE 33rd Annual
Print_ISBN :
0-7803-7262-X
Type :
conf
DOI :
10.1109/PSEC.2002.1022520
Filename :
1022520
Link To Document :
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