• DocumentCode
    2033218
  • Title

    Throughput Enhancement in Electron Beam Direct Writing by Multiple-cell Shot Technique for Logic Devices

  • Author

    Kosai, Shohei ; Inanami, Ryoichi ; Hamada, Mototsugu ; Magoshi, Shunko ; Hatori, Fumitoshi

  • Author_Institution
    SoC R&D Center, Toshiba Corp., Kawasaki
  • fYear
    2006
  • fDate
    22-24 May 2006
  • Firstpage
    217
  • Lastpage
    220
  • Abstract
    This paper reports a new pattern design method improving the throughput of the character projection electron beam direct writing (CP-EBDW) lithography for cell-based logic devices. The shot count decreases to approximately one fifth in a 90 nm CMOS technology by assembling the standard cells (SCs) in the physical design stage and exposing them at a time with multiple-cell shot technique. The operating frequency degradation of the logic devices is less than 5 %
  • Keywords
    CMOS logic circuits; assembling; electron beam lithography; 90 nm; CMOS technology; CP-EBDW lithography; assembling; cell-based logic devices; character projection electron beam direct writing; multiple-cell shot; Assembly; CMOS technology; Degradation; Design methodology; Electron beams; Frequency; Lithography; Logic devices; Throughput; Writing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Manufacturing Conference, 2006. ASMC 2006. The 17th Annual SEMI/IEEE
  • Conference_Location
    Boston, MA
  • ISSN
    1078-8743
  • Print_ISBN
    1-4244-0254-9
  • Type

    conf

  • DOI
    10.1109/ASMC.2006.1638755
  • Filename
    1638755