DocumentCode
2033218
Title
Throughput Enhancement in Electron Beam Direct Writing by Multiple-cell Shot Technique for Logic Devices
Author
Kosai, Shohei ; Inanami, Ryoichi ; Hamada, Mototsugu ; Magoshi, Shunko ; Hatori, Fumitoshi
Author_Institution
SoC R&D Center, Toshiba Corp., Kawasaki
fYear
2006
fDate
22-24 May 2006
Firstpage
217
Lastpage
220
Abstract
This paper reports a new pattern design method improving the throughput of the character projection electron beam direct writing (CP-EBDW) lithography for cell-based logic devices. The shot count decreases to approximately one fifth in a 90 nm CMOS technology by assembling the standard cells (SCs) in the physical design stage and exposing them at a time with multiple-cell shot technique. The operating frequency degradation of the logic devices is less than 5 %
Keywords
CMOS logic circuits; assembling; electron beam lithography; 90 nm; CMOS technology; CP-EBDW lithography; assembling; cell-based logic devices; character projection electron beam direct writing; multiple-cell shot; Assembly; CMOS technology; Degradation; Design methodology; Electron beams; Frequency; Lithography; Logic devices; Throughput; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference, 2006. ASMC 2006. The 17th Annual SEMI/IEEE
Conference_Location
Boston, MA
ISSN
1078-8743
Print_ISBN
1-4244-0254-9
Type
conf
DOI
10.1109/ASMC.2006.1638755
Filename
1638755
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