Analysis and comparison of planar- and Trench-IGBT-Modules under ZVS and ZCS switching conditions

For qualification in resonant converters, a standard-IGBT-module, a fast-IGBT-module, both with IGBTs of the 2^nd generation and two new trench-gate-IGBT-modules of the 3^rd generation with different EMCON-Diodes are characterized and compared. A teststand was established, which works in the zero voltage or in the zero current mode. Investigations in the ZVS mode show that the trench-IGBT-module can be driven up to high frequencies in a low loss manner like the fast-IGBT-module which is optimized for this mode. In the ZCS mode the modules show comparable losses for low and medium frequencies. At very high frequencies the fast-IGBT-module and one of the tested trench-IGBT-modules show the best performance.