Title :
Peculiarities of electron transport in pHEMT on donor-acceptor doping heterostructures
Author :
Lukashin, V.M. ; Pashkovskiy, A.B. ; Zhuravlev, K.S. ; Toropov, A.I. ; Lapin, V.G. ; Golant, E.I. ; Kapralova, A.A.
Author_Institution :
Fed. State Unitary Corp. R&PC Istok, Fryazino, Russia
Abstract :
The study results of physical mechanisms which provide abrupt increase of output power of pHEMT with donor-acceptor doping heterostructures are presented. It is shown, that complementary using of potential barriers provokes abrupt decrease of the role of transversal space transfer of electrons in the heterostructure, and increases the role of energy quantization in transistor channels.
Keywords :
high electron mobility transistors; semiconductor doping; donor-acceptor doping heterostructures; electron transport; energy quantization; pHEMT; potential barriers; transistor channels; transversal space electron transfer; Doping; Electric potential; Electronic mail; Logic gates; PHEMTs; Region 8;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-395-1
