DocumentCode :
2033514
Title :
Nanoscale laser writing of Indium-Tin-Oxide nanowires
Author :
Afshar, M. ; Feili, D. ; Voellm, H. ; Straub, M. ; Koenig, K. ; Seidel, H.
Author_Institution :
Inst. of Micromechanics, Microfluidics, & Microactuators, Saarland Univ., Saarbrucken, Germany
fYear :
2012
fDate :
5-8 March 2012
Firstpage :
441
Lastpage :
444
Abstract :
In this study we report on sub-wavelength nanostructuring of sputtered Indium-Tin-Oxide (ITO) films using a high-repetition rate near-infrared Ti:Sapphire laser system based on a 85 MHz, sub-10 fs resonator. Our experiments demonstrate that cuts as small as 20 nm in width can be generated by ablation. ITO nanowires ranging in size down to 50 nm were produced by laser writing at radiant exposure below the ablation threshold followed by etching in hydrochloric acid. The dependence of the minimum structure size on irradiation and material parameters as well as the electrical properties of the nanowires were investigated.
Keywords :
etching; indium compounds; nanofabrication; nanowires; semiconductor growth; semiconductor thin films; sputter deposition; wide band gap semiconductors; ITO; electrical properties; etching; high-repetition rate near-infrared laser system; hydrochloric acid; indium-tin-oxide nanowires; nanoscale laser writing; size 20 nm; sputtered indium-tin-oxide films; subwavelength nanostructuring; Indium; Ion beams; Lasers; Nanowires; Optical imaging; Ultrafast optics; indium tin oxide; nanowires; self-organization; sub-100 nm structures; sub-15 fs laser pulses; surface ripples; thin films;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2012 7th IEEE International Conference on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4673-1122-9
Type :
conf
DOI :
10.1109/NEMS.2012.6196813
Filename :
6196813
Link To Document :
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