Impact of doping concentration and donor-layer thickness on the dc characterization of symmetric double-gate and single-gate InAlAs/InGaAs/InP HEMT for nanometer gate dimension-A comparison

Author

Bhattacharya, Monika ; Jogi, Jyotika ; Gupta, R.S. ; Gupta, Mridula

Author_Institution

Dept. of Electron. Sci., Univ. of Delhi, New Delhi, India

fYear

2010

fDate

21-24 Nov. 2010

Firstpage

134

Lastpage

139

Abstract

The aim of this paper is to investigate the impact of gate-length (L_g) and doping concentration (N_d) of the donor layer and its thickness (d_a) on the performance of double-gate (DG) InAlAs/InGaAs/InP HEMT. A comparison of the impact of donor-layer doping concentration, donor-layer thickness and gate-length on the channel current, transconductance, gate-to-source capacitance and cut-off frequency for the DG-HEMT has been studied with that for SG-HEMT. As a result of this comparison the DG-HEMT has been seen to exhibit more sensitivity to these device parameters. This is due to greater sheet-carrier concentration and better gate-control. Thus, the optimization of the donor-layer doping, donor-layer thickness and gate-length in the case of DG-HEMT is crucial.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor doping; DC characterization; DG-HEMT; InAlAs-InGaAs-InP; SG-HEMT; cut-off frequency; donor-layer doping; donor-layer doping concentration; donor-layer thickness; doping concentration; gate-control; gate-length; gate-to-source capacitance; nanometer gate dimension; sheet-carrier concentration; single-gate HEMT; symmetric double-gate HEMT; Double-Gate High Electron Mobility Transistor (DG-HEMT); cut-off frequency; doping concentration; noise performance; tied gate;

fLanguage

English

Publisher

ieee

Conference_Titel

TENCON 2010 - 2010 IEEE Region 10 Conference

Conference_Location

Fukuoka

ISSN

pending

Print_ISBN

978-1-4244-6889-8

Type

conf

DOI

10.1109/TENCON.2010.5685856

Filename

5685856