• DocumentCode
    2033744
  • Title

    Numerical simulation of CZTS thin film solar cell

  • Author

    Zhao, Wenhao ; Zhou, Wenli ; Miao, Xiangshui

  • Author_Institution
    Dept. of Electron. Sci. & Technol., Huazhong Univ. of Sci. & Technol., Wuhan, China
  • fYear
    2012
  • fDate
    5-8 March 2012
  • Firstpage
    502
  • Lastpage
    505
  • Abstract
    The performance of CZTS (Cu2ZnSnS4) thin film solar cell is numerically simulated in this paper. The influences of structural and physical parameters are studied, including thickness, carrier density and defect density of CZTS absorber, thickness of CdS buffer layer. It can be found in the simulation results that to reach high conversion efficiency, the cell should have a thin buffer layer and a thick absorber layer. It is necessary to control the defect density in the absorber one order lower than carrier density. The effect of operating temperature on the cell performance shows that increased temperature will strongly affect the efficiency. The presence of low band gap interfacial layer between CZTS absorber and Mo back contact may lower the open circuit voltage.
  • Keywords
    carrier density; copper compounds; numerical analysis; semiconductor thin films; solar cells; sulphur compounds; ternary semiconductors; tin compounds; zinc compounds; CZTS absorber; CZTS performance; CZTS thin film solar cell; Cu2ZnSnS4; absorber layer; buffer layer; carrier density; defect density; defect density control; low band gap interfacial layer; numerical simulation; physical parameters; structural parameters; Numerical models; Zinc oxide; AMPS-1D; CZTS solar cell; numerical simulation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano/Micro Engineered and Molecular Systems (NEMS), 2012 7th IEEE International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-1-4673-1122-9
  • Type

    conf

  • DOI
    10.1109/NEMS.2012.6196826
  • Filename
    6196826