DocumentCode :
2033744
Title :
Numerical simulation of CZTS thin film solar cell
Author :
Zhao, Wenhao ; Zhou, Wenli ; Miao, Xiangshui
Author_Institution :
Dept. of Electron. Sci. & Technol., Huazhong Univ. of Sci. & Technol., Wuhan, China
fYear :
2012
fDate :
5-8 March 2012
Firstpage :
502
Lastpage :
505
Abstract :
The performance of CZTS (Cu2ZnSnS4) thin film solar cell is numerically simulated in this paper. The influences of structural and physical parameters are studied, including thickness, carrier density and defect density of CZTS absorber, thickness of CdS buffer layer. It can be found in the simulation results that to reach high conversion efficiency, the cell should have a thin buffer layer and a thick absorber layer. It is necessary to control the defect density in the absorber one order lower than carrier density. The effect of operating temperature on the cell performance shows that increased temperature will strongly affect the efficiency. The presence of low band gap interfacial layer between CZTS absorber and Mo back contact may lower the open circuit voltage.
Keywords :
carrier density; copper compounds; numerical analysis; semiconductor thin films; solar cells; sulphur compounds; ternary semiconductors; tin compounds; zinc compounds; CZTS absorber; CZTS performance; CZTS thin film solar cell; Cu2ZnSnS4; absorber layer; buffer layer; carrier density; defect density; defect density control; low band gap interfacial layer; numerical simulation; physical parameters; structural parameters; Numerical models; Zinc oxide; AMPS-1D; CZTS solar cell; numerical simulation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2012 7th IEEE International Conference on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4673-1122-9
Type :
conf
DOI :
10.1109/NEMS.2012.6196826
Filename :
6196826
Link To Document :
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