• DocumentCode
    2033748
  • Title

    Damage-Free Cryogenic Aerosol Clean Processes

  • Author

    Lin, Hong ; Yu, Chienfan ; Chioujones, Kelly ; Freebern, Tim ; Lauerhaas, Jeff

  • Author_Institution
    IBM Syst. & Tech. Group, East Fishkill, NY
  • fYear
    2006
  • fDate
    22-24 May 2006
  • Firstpage
    301
  • Lastpage
    305
  • Abstract
    Nitrogen cryogenic aerosol processes have been evaluated for damage free cleaning on 90nm and 65nm technologies at the IBM 300mm manufacturing line. Process results on the 90nm technology at the post spacer nitride deposition clean have shown no damage and particle removal efficiency greater than 92%. Implementation of the same aerosol process at the post cobalt silicide (CoSi) probe test clean on 90nm high aspect ratio gate structure has shown significant improvement over the previous process of record argon based aerosol. Evaluation of the post nickel silicide (NiSi) probe test clean on 65nm device technology with low aspect ratio gate structure have shown the process is damage-free with particle removal efficiency greater than 95%. This process has been implemented in the 65nm technology flow and has proven to be damage-free in volume manufacturing
  • Keywords
    aerosols; cobalt compounds; cryogenics; integrated circuit manufacture; nickel compounds; surface cleaning; 300 nm; 65 nm; 90 nm; CoSi; NiSi; damage free cleaning; nitrogen cryogenic aerosol; particle removal efficiency; post spacer nitride deposition clean; probe test clean; Aerosols; Cleaning; Cobalt; Cryogenics; Manufacturing processes; Nitrogen; Probes; Silicides; Space technology; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Manufacturing Conference, 2006. ASMC 2006. The 17th Annual SEMI/IEEE
  • Conference_Location
    Boston, MA
  • ISSN
    1078-8743
  • Print_ISBN
    1-4244-0254-9
  • Type

    conf

  • DOI
    10.1109/ASMC.2006.1638773
  • Filename
    1638773