DocumentCode
2033748
Title
Damage-Free Cryogenic Aerosol Clean Processes
Author
Lin, Hong ; Yu, Chienfan ; Chioujones, Kelly ; Freebern, Tim ; Lauerhaas, Jeff
Author_Institution
IBM Syst. & Tech. Group, East Fishkill, NY
fYear
2006
fDate
22-24 May 2006
Firstpage
301
Lastpage
305
Abstract
Nitrogen cryogenic aerosol processes have been evaluated for damage free cleaning on 90nm and 65nm technologies at the IBM 300mm manufacturing line. Process results on the 90nm technology at the post spacer nitride deposition clean have shown no damage and particle removal efficiency greater than 92%. Implementation of the same aerosol process at the post cobalt silicide (CoSi) probe test clean on 90nm high aspect ratio gate structure has shown significant improvement over the previous process of record argon based aerosol. Evaluation of the post nickel silicide (NiSi) probe test clean on 65nm device technology with low aspect ratio gate structure have shown the process is damage-free with particle removal efficiency greater than 95%. This process has been implemented in the 65nm technology flow and has proven to be damage-free in volume manufacturing
Keywords
aerosols; cobalt compounds; cryogenics; integrated circuit manufacture; nickel compounds; surface cleaning; 300 nm; 65 nm; 90 nm; CoSi; NiSi; damage free cleaning; nitrogen cryogenic aerosol; particle removal efficiency; post spacer nitride deposition clean; probe test clean; Aerosols; Cleaning; Cobalt; Cryogenics; Manufacturing processes; Nitrogen; Probes; Silicides; Space technology; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference, 2006. ASMC 2006. The 17th Annual SEMI/IEEE
Conference_Location
Boston, MA
ISSN
1078-8743
Print_ISBN
1-4244-0254-9
Type
conf
DOI
10.1109/ASMC.2006.1638773
Filename
1638773
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