Detection of Resistive Shorts and Opens using Voltage Contrast Inspection

Author

Patterson, Oliver D. ; Wildman, Horatio ; Gal, Doron ; Wu, Kevin

Author_Institution

IBM, Hopewell Junction, NY

fYear

2006

fDate

22-24 May 2006

Firstpage

327

Lastpage

333

Abstract

The ability of voltage contrast inspection to detect resistive opens and shorts was investigated. Resistive programmed defects ranging from 8 kOmega to 4 MOmega, were created using integrated poly-silicon resistors. While all the shorts were easily detected, only the 4 MOmega, open had a signal, and it was too faint for automatic detection. A model is presented to help explain these results. A follow-up study with resistances in the MOmega range is now in progress. Based on the experimental and modeling work described in this paper, we anticipate the threshold for detection of resistive opens will be between 10 and 20 MOmega

Keywords

electron beam testing; fault diagnosis; inspection; scanning electron microscopy; 0.008 to 4 Mohm; 10 to 20 Mohm; automatic detection; inspection SEM; resistive opens; resistive programmed defects; resistive shorts; soft failures; voltage contrast inspection; Condition monitoring; Contact resistance; Feedback; Inspection; Integrated circuit yield; Metals industry; Probes; Resistors; Semiconductor device testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference, 2006. ASMC 2006. The 17th Annual SEMI/IEEE

Conference_Location

Boston, MA

ISSN

1078-8743

Print_ISBN

1-4244-0254-9

Type

conf

DOI

10.1109/ASMC.2006.1638778

Filename

1638778