• DocumentCode
    2033943
  • Title

    Investigation of characteristics and modeling of Ka-band 0.15 µm GaN HEMT on SiC substrate

  • Author

    Dobush, I.M. ; Kokolov, A.A. ; Torkhov, A.A. ; Babak, L.I.

  • Author_Institution
    Tomsk State Univ. of Control Syst. & Radioelectron., Tomsk, Russia
  • fYear
    2013
  • fDate
    8-14 Sept. 2013
  • Firstpage
    125
  • Lastpage
    126
  • Abstract
    A brief description of the design and manufacturing technology of 0.15 um GaN HEMT on SiC with T-shaped gate for the Ka-band is presented. The probe measurements of GaN HEMT with Wg = 4×100 μm are presented. Based on these measurements the nonlinear model EEHEMT was constructed.
  • Keywords
    III-V semiconductors; gallium compounds; high electron mobility transistors; semiconductor device manufacture; semiconductor device measurement; silicon compounds; wide band gap semiconductors; GaN; Ka-band HEMT; SiC; T-shaped gate; design technology; manufacturing technology; nonlinear model EEHEMT; probe measurements; size 0.15 mum; Electronic mail; Gallium nitride; HEMTs; Microwave technology; Semiconductor device measurement; Silicon carbide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-966-335-395-1
  • Type

    conf

  • Filename
    6652752
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2033943