Title :
Determination of kinetic parameters of gaas by monte carlo simulation of semiconductor plasma
Author :
Kilessa, G.V. ; Asanov, E.E. ; Zuev, S.A. ; Slipchenko, N.I.
Author_Institution :
Taurida Nat. V.I. Vernadsky Univ., Simferopol, Ukraine
Abstract :
The paper presents the results of computational experiments to determine GaAs kinetic parameters. The calculated dependences of scattering rates on the energy of carriers in valleys of GaAs are presented. The optimal energy intervals are determined for implementation of ballistic transport. The time and field dependences of drift velocity of carriers are calculated.
Keywords :
Monte Carlo methods; ballistic transport; gallium arsenide; Monte Carlo simulation; ballistic transport; drift velocity; scattering rates; semiconductor plasma; Educational institutions; Electron mobility; Electronic mail; Gallium arsenide; Kinetic theory; Scattering;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-395-1
