Title :
The influence of the coefficient of nonparabolicity on the distribution of the scattering angles in GaAs
Author :
Kilessa, G.V. ; Asanov, E.E. ; Zuev, S.A. ; Starostenko, V.V.
Author_Institution :
Taurida Nat. V.I. Vernadsky Univ., Simferopol, Ukraine
Abstract :
The paper states that when determining the scattering angle for interaction of electrons with acoustic phonons by deformation potential the coefficient of nonparabolicity shall be taken into account only for charge carriers in Γ valley. Also the analysis of distribution of scattering angles of polar scattering on LO-phonons and scattering on ionized impurities has been conducted.
Keywords :
III-V semiconductors; acoustic wave scattering; deformation; electron-phonon interactions; gallium arsenide; GaAs; LO-phonon; charge carrier; deformation potential; electron-phonon interaction; impurity ionization; nonparabolicity coefficient; polar scattering; scattering angle distribution; Acoustics; Electronic mail; Gallium arsenide; IP networks; Impurities; Phonons; Scattering;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-395-1
