Title :
Comparison of glass etching properties between HCl and HNO3 solution
Author :
Wei Tao ; Wenlong Lv ; Zhan Zhan ; Wenjia Zuo ; Xiaochun Qiu ; Linyun Wang ; Daoheng Sun
Author_Institution :
Dept. of Mech. & Electr. Eng., Xiamen Univ., Xiamen, China
Abstract :
A comparison of glass etching properties between HCl and HNO3 solution is presented in this paper, which allows us to predict the etched product´s shape under a variety of etching conditions, mask compensation and multiple processing steps. Four conclusions could be draw from the experiments. First, the best concentration ratio of the etching solution to protect the mask from damage and get a channel with depth of 40 μm is HF:HCl:NH4F=5.5mol/L:4mol/L:2.5mol/L. Second, as the temperature increases, the longitudinal etching rate increases. However, the temperature has little influence on the lateral erosion ratio when the temperature gets high. Third, HCl has a better surface morphology against HNO3 as an addition to solution. Last, the mask will introduce strain because of sputtering, which is harmful to the glass etching..
Keywords :
compensation; erosion; hydrogen compounds; sputter etching; surface morphology; HCI; HNO3; depth 40 mum; etching rate; glass etching properties; lateral erosion ratio; mask compensation; multiple processing steps; sputtering; surface morphology; Human computer interaction; Integrated circuits; Nanoelectromechanical systems; HCl; HNO3; glass etching; masking layer;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2012 7th IEEE International Conference on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4673-1122-9
DOI :
10.1109/NEMS.2012.6196838