Title :
An 800 volts high voltage interconnection level shifter using Floating Poly Field Plate (FPFP) method
Author :
Sihombing, Rudy Octavius ; Sheu, Gene ; Yang, Shao-Ming ; Wasisto, Hutomo Suryo ; Guo, Yu-Feng ; Tu, Shang-Hui ; Chin, Yu-Lung ; Jan, Jin-Shyong ; Lee, Chia-Hao
Author_Institution :
Comput. Sci. & Inf. Eng. Dept., Asia Univ., Taichung, Taiwan
Abstract :
An 800V LDMOS high voltage level shifter circuit using Floating Poly Field Plate (FPFP) method is proposed in this paper. In conventional structure, breakdown voltage drops for almost 65-70% from the original breakdown while crossing the High Voltage Interconnection (HVI) metal line over the high-voltage p-n junction. Compared to the conventional method, FPFP method would drastically reduce the influence of the interconnection, from 67% to less than 10% Furthermore, the study of HVI effect, different FPFP design scheme, FPFP length variation, and mask design layout consideration will be discussed in this paper.
Keywords :
MOS integrated circuits; power integrated circuits; FPFP length variation; FPFP method; HVI metal line; LDMOS high-voltage level shifter circuit; breakdown voltage; floating polyfield plate method; high-voltage interconnection level shifter; high-voltage p-n junction; mask design layout; voltage 800 V;
Conference_Titel :
TENCON 2010 - 2010 IEEE Region 10 Conference
Conference_Location :
Fukuoka
Print_ISBN :
978-1-4244-6889-8
DOI :
10.1109/TENCON.2010.5685878
