Generation efficiency of planar n+-n-n+ diode with tunnel boundaries

The planar n⁺-n-n⁺ diode with tunnel lateral boundaries based on n-type epitaxial film which is grown on a semi-insulating GaAs substrate is considered. It is shown that having two sites with the tunneling characteristics on the lateral border of the planar diode leads to two areas of negative differential conductance on the current-voltage characteristic of the diode and leads to the generation of two zones of the voltage. The influence of the location and extent of the boundaries on the energy and frequency characteristics are shown. The experimental current-voltage curves of the structure are given.