A novel 800V multiple RESURF LDMOS utilizing linear p-top rings

Author

Wasisto, Hutomo Suryo ; Sheu, Gene ; Yang, Shao-Ming ; Sihombing, Rudy Octavius ; Guo, Yufeng ; Tu, Shang-Hui ; Lee, Chia-Hao ; Chin, Yu-Lung ; Jan, Jin-Shyong

Author_Institution

Comput. Sci. & Inf. Eng. Dept., Asia Univ., Taichung, Taiwan

fYear

2010

fDate

21-24 Nov. 2010

Firstpage

75

Lastpage

79

Abstract

In this paper, a novel 800V multiple RESURF lateral double-diffused MOS (LDMOS) transistor in junction-isolated power IC technology is developed and successfully simulated. The proposed multiple RESURF LDMOS is able to achieve a specific on-resistance of lower than 130 mΩcm² while maintaining a breakdown voltage of over 800 volts. The key feature of this novel device is round shape p-top rings which are located on the surface of n-drift region. Optimization of p-top mask design is performed in order to achieve the lowest on-resistance possible with the desired breakdown voltage. An investigation of 3D effect in cylindrical layout is also presented to confirm the performance of device.

Keywords

optimisation; power MOSFET; power integrated circuits; semiconductor device breakdown; 3D effect; breakdown voltage; cylindrical layout; junction isolated power IC technology; lateral double diffused MOS transistor; linear p-top rings; lowest on-resistance; multiple RESURF LDMOS; n-drift region; p-top mask design optimization; voltage 800 V;

fLanguage

English

Publisher

ieee

Conference_Titel

TENCON 2010 - 2010 IEEE Region 10 Conference

Conference_Location

Fukuoka

ISSN

pending

Print_ISBN

978-1-4244-6889-8

Type

conf

DOI

10.1109/TENCON.2010.5685880

Filename

5685880