Sensitivity enhancement in SGOI nanowire biosensor fabricated by top surface passivation

Author

Chang, Kow-Ming ; Chen, Chu-Feng ; Lai, Chiung-Hui ; Hsieh, Cheng-Ting ; Wu, Chin-Ning ; Wang, Yu-Bin ; Liu, Chung-Hsien

Author_Institution

Dept. of Elec. Eng. & Inst. of Elec., Nat. Chiao-Tung Univ., Hsinchu, Taiwan

fYear

2012

fDate

5-8 March 2012

Firstpage

579

Lastpage

582

Abstract

Increasing the fraction of Ge in SiGe-on-Insulator (SGOI) using Ge condensation by oxidation significantly increases hole mobility. This effect can be exploited to improve the sensitivity of SGOI nanowire. However, our previous studies found that the sensitivity of an SGOI nanowire is degraded as the Ge fraction increases over 20%, because of the surface state of SiGe is unstable when the Ge fraction is high. In this work, a top surface passtivation SiO₂ layer was deposited on an Si_0.8Ge_0.2 nanowire and successfully improve its sensitivity around 1.3 times that of the nanowire sample without top a passivation layer.

Keywords

Ge-Si alloys; biosensors; condensation; hole mobility; nanosensors; nanowires; oxidation; passivation; semiconductor materials; surface states; SGOI nanowire biosensor; SiGe; germanium condensation; germanium fraction; hole mobility; oxidation; surface state; top surface passivation; Atomic layer deposition; Biosensors; Nanoelectromechanical systems; Oxidation; Passivation; Silicon germanium; SiGe-on-Insulator; bio-sensor; passivation;

fLanguage

English

Publisher

ieee

Conference_Titel

Nano/Micro Engineered and Molecular Systems (NEMS), 2012 7th IEEE International Conference on

Conference_Location

Kyoto

Print_ISBN

978-1-4673-1122-9

Type

conf

DOI

10.1109/NEMS.2012.6196842

Filename

6196842