DocumentCode
2034134
Title
Monte-Carlo simulation of diodes with a cathode static domain
Author
Prokhorov, E.D. ; Botsula, O.V. ; Dyadchenko, A.V. ; Gorbunov, I.A.
Author_Institution
V.N. Karazin Kharkiv Nat. Univ., Kharkiv, Ukraine
fYear
2013
fDate
8-14 Sept. 2013
Firstpage
141
Lastpage
142
Abstract
Diodes, where the static domain is formed under certain conditions in a cathode, are considered. Impact ionization can occur in cathode static domain at high voltages. The occurrence of impact ionization leads to the avalanche-transit effects and creates noise generation. The analysis was performed using Monte Carlo simulation. The advantages of a metal cathode over n + cathode to achieve breakdown voltages at which the noise generation takes place, are shown. The calculations are compared with experiment for the GaAs diodes.
Keywords
Monte Carlo methods; cathodes; diodes; gallium arsenide; ionisation; GaAs diodes; Monte Carlo simulation; Monte-Carlo simulation; avalanche-transit effects; cathode static domain; high voltages; impact ionization leads; metal cathode; noise generation; Cathodes; Electronic mail; Gallium arsenide; Impact ionization; Monte Carlo methods; Noise; Semiconductor diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-966-335-395-1
Type
conf
Filename
6652760
Link To Document