Monte-Carlo simulation of diodes with a cathode static domain

Diodes, where the static domain is formed under certain conditions in a cathode, are considered. Impact ionization can occur in cathode static domain at high voltages. The occurrence of impact ionization leads to the avalanche-transit effects and creates noise generation. The analysis was performed using Monte Carlo simulation. The advantages of a metal cathode over n ⁺ cathode to achieve breakdown voltages at which the noise generation takes place, are shown. The calculations are compared with experiment for the GaAs diodes.