Title :
Graded-gap Gunn diodes on the base of InBn and GaBn
Author :
Arkusha, Yu.V. ; Storozhenko, I.P. ; Yaroshenko, A.N.
Author_Institution :
V.N. Karazin Kharkov Nat. Univ., Kharkiv, Ukraine
Abstract :
Physical phenomena of the transfer electron effect in Gunn diodes based on the InBN and GaBN graded gap semiconductors. InBN and GaBN diodes output power at the different maintenance of BN was determined. Optimum distribution of the BN binary components is found in the diode. It is shown that graded gap Gunn diodes InBN and GaBN excels InN and GaN in efficiency of generation and output power and graded gap AlInN and AlGaN diodes.
Keywords :
Gunn diodes; III-V semiconductors; aluminium compounds; boron compounds; gallium compounds; indium compounds; wide band gap semiconductors; AlGaN; AlInN; GaBN; GaN; InBN; InN; graded gap Gunn diodes; graded gap semiconductors; graded-gap Gunn diodes; physical phenomena; transfer electron effect; Abstracts; Aluminum gallium nitride; Conductors; Educational institutions; Electronic mail; Gallium nitride; Power generation;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-395-1
