• DocumentCode
    2034197
  • Title

    Graded-gap Gunn diodes on the base of InBn and GaBn

  • Author

    Arkusha, Yu.V. ; Storozhenko, I.P. ; Yaroshenko, A.N.

  • Author_Institution
    V.N. Karazin Kharkov Nat. Univ., Kharkiv, Ukraine
  • fYear
    2013
  • fDate
    8-14 Sept. 2013
  • Firstpage
    145
  • Lastpage
    146
  • Abstract
    Physical phenomena of the transfer electron effect in Gunn diodes based on the InBN and GaBN graded gap semiconductors. InBN and GaBN diodes output power at the different maintenance of BN was determined. Optimum distribution of the BN binary components is found in the diode. It is shown that graded gap Gunn diodes InBN and GaBN excels InN and GaN in efficiency of generation and output power and graded gap AlInN and AlGaN diodes.
  • Keywords
    Gunn diodes; III-V semiconductors; aluminium compounds; boron compounds; gallium compounds; indium compounds; wide band gap semiconductors; AlGaN; AlInN; GaBN; GaN; InBN; InN; graded gap Gunn diodes; graded gap semiconductors; graded-gap Gunn diodes; physical phenomena; transfer electron effect; Abstracts; Aluminum gallium nitride; Conductors; Educational institutions; Electronic mail; Gallium nitride; Power generation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-966-335-395-1
  • Type

    conf

  • Filename
    6652762
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2034197