Title :
Dependence of CVC of planar Schottky diode on thickness of active regions
Author :
Asanov, E.E. ; Kilessa, G.V. ; Zuev, S.A. ; Slipchenko, N.I.
Author_Institution :
Taurida Nat. V.I. Vernadsky Univ., Simferopol, Ukraine
Abstract :
The model of an active region of the Schottky diode on GaAs is presented. The dependences of a direct branch of CVC of a diode and field penetration into a semiconductor on thickness of the active region were studied. It was concluded that a decrease in the thickness shifts the CVC to lower currents due to the increase of resistance and penetration of the barrier field into the substrate.
Keywords :
III-V semiconductors; Schottky diodes; gallium arsenide; CVC; GaAs; active region thickness; barrier field; field penetration; gallium arsenide; planar Schottky diode; Abstracts; Educational institutions; Electronic mail; Gallium arsenide; Schottky diodes; Semiconductor device modeling;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-395-1
