DocumentCode :
2034265
Title :
Analysis and comparison of methods for extracting the inductance and capacitance of TSVs
Author :
Ndip, Ivan ; Lobbicke, Kai ; Zoschke, K. ; Guttowski, Stephan ; Wolf, J. ; Reichl, Herbert ; Lang, K.-D.
Author_Institution :
Fraunhofer IZM, Berlin, Germany
fYear :
2012
fDate :
5-7 Dec. 2012
Firstpage :
407
Lastpage :
411
Abstract :
Closed-form expressions and numerical/measurement-based methods for extracting the inductance (L) and capacitance (C) of Through Silicon Vias (TSVs) are analyzed and compared for frequencies up to 40 GHz. The discrepancies between the methods are discussed. The TSVs are designed, fabricated and measured. Good correlation is obtained between L and C values of TSVs extracted from RF measurements and electromagnetic field simulations.
Keywords :
electromagnetic field theory; electromagnetic fields; integrated circuit interconnections; three-dimensional integrated circuits; TSV; capacitance; closed-form expressions; electromagnetic field simulations; inductance; numerical-measurement-based methods; through silicon vias; Capacitance; Capacitance measurement; Conferences; Electronics packaging; Inductance; Through-silicon vias; Transmission line measurements;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Packaging Technology Conference (EPTC), 2012 IEEE 14th
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-4553-8
Electronic_ISBN :
978-1-4673-4551-4
Type :
conf
DOI :
10.1109/EPTC.2012.6507117
Filename :
6507117
Link To Document :
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