Title :
“Visual” technique for design of microwave power amplifiers using large signal S-parameters
Author :
Kokolov, A.A. ; Babak, L.I.
Author_Institution :
Tomsk State Univ. of Control Syst. & Radioelectron., Tomsk, Russia
Abstract :
The "visual" technique for microwave power amplifier (PA) design is proposed. The design is based on load-pull simulations (or load-pull measurements) and large signal S-parameters. The technique takes into account a set of PA performances including output power, efficiency, large signal gain, input and output matching, stability, etc. As an example, the 30-33 GHz two-stage MMIC PA is designed based on the 0.15 μm GaN HEMT process on SiC substrate.
Keywords :
III-V semiconductors; MMIC power amplifiers; S-parameters; gallium compounds; high electron mobility transistors; wide band gap semiconductors; GaN; HEMT process; PA design; frequency 30 GHz to 33 GHz; large signal S-parameters; load-pull simulations; microwave power amplifier design; size 0.15 mum; two-stage MMIC PA; visual technique; Gallium nitride; HEMTs; Microwave amplifiers; Microwave circuits; Power amplifiers; Silicon carbide;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-395-1
